naina s emiconductor 1 d-95, sector 63, noida sales@nainasemi.com phase control features ? metal case with ceramic insulator ? high current rating ? bifacial cooled ? center gate trigger applications ? dc motor controls ? ac controllers ? dc power supplies voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak & off- state voltage v 504DCR 04 400 06 600 08 800 10 1000 12 1200 14 1400 16 1600 switching ratings (t j = 25 0 c, unless otherwise parameters rate of rise of turn-on current @ t j = t j max, anode voltage typical turn-on time typical turn-off time electrical ratings (t j = 25 0 c, unless otherwise specified parameters maximum on-state average current 180 o sinusoidal conduction @ t maximum rms on-state current maximum peak, one cycle non- repetitive surge current maximum i 2 t for fusing @ t = 10ms maximum repetitive peak on and off- state voltage range maximum peak on-state voltage (t j = 125 0 c, i peak maximum holding current @ t j = 25 0 c maximum latching current @t j = 25 0 c threshold voltage slope resistance emiconductor ltd. 504DCR sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com control thyristors (capsule type) , maximum repetitive peak state voltage v v rsm , maximum non- repetitive peak voltage v 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 c, unless otherwise specified) symbol values max, anode voltage 80% v drm di/dt 1000 t d 1.0 t q 100 c, unless otherwise specified ) symbol sinusoidal conduction @ t c = 55 0 c i t(av) i t(rms) repetitive surge current i tsm i 2 t state voltage range v rrm , v drm peak = 1100a) v tm i h i l v t0 r t to- 200ab (a 504DCR 4205450 ? fax: 0120 -4273653 i drm /i rrm , maximum at t j = t j maximum ma 20 values units 1000 a/s 1.0 s 100 symbol values units 500 a 785 a 6000 a 218 ka 2 s drm 200 to 1600 v 1.3 v 200 ma 800 ma 0.81 v 0.52 m? 200ab (a -puk) www.datasheet.co.kr datasheet pdf - http://www..net/
naina s emiconductor 2 d-95, sector 63, noida sales@nainasemi.com triggering parameters (t j = 25 0 c, unless otherwise parameters dc gate current to trigger dc gate voltage to trigger thermal and mechanical specifications parameters maximum operating junction temperature range maximum storage temperature range maximum thermal resistance, junction to case mounting torque approximate weight blocking parameters (t j = 25 0 c, unless otherwise parameters critical rate of rise of off-state voltage @ t j = t j v drm maxmimum peak reverse & off- state leakage current @ t v drm /v rrm applied emiconductor ltd. 504DCR sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com c, unless otherwise specified) symbol values i gt 150 v gt 3.0 thermal and mechanical specifications (t j = 25 0 c, unless otherwise specified) symbol values maximum operating junction temperature range t j - 40 to t stg - 40 to r th(jc) 0. f 4 .2 w t all dimensions in mm c, unless otherwise specified) symbol values j max, linear to 80% rated dv/dt 5 state leakage current @ t j = t j max, rated i rrm , i drm 504DCR 4205450 ? fax: 0120 -4273653 values units 150 ma 3.0 v values units to +125 0 c to +125 0 c 0. 08 0 c/w .2 .. 7.3 kn 65 g values units 5 00 v/s 20 ma www.datasheet.co.kr datasheet pdf - http://www..net/
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